In this paper, a TiO2/NiO heterogeneous composite thin film ultraviolet detector based on the dark state self-depletion effect was designed and fabricated. The N-type TiO2 film is prepared by the sol-gel method, and P-type NiO thin films and Ni/Au alloy electrodes are simultaneously prepared by a unique one-step oxidation method. Compared with devices
Under equilibrium conditions, the shape (morphology) of the single crystal is dictated by the minimization of total Gibbs surface free energy, as prescribed by the Wulff theorem. 63 With increasing chemical potential driving force (e.g., higher η), the surface integration of atoms changes from the spiral 1D growth mechanism to 2D growth mechanism
Single-crystal lithium niobate thin films (lithium niobate on insulator, LNOI) are becoming a new material platform for integrating photonics. Investigation into the physical
The etching conditions are obtained to avoid the phenomenon of incomplete etching of the sacrificial layer, so that the transfer technology can be better applied in the field of heterogeneous integration, and Si MOSFETs on sapphire substrate were fabricated by using the optimized transfer technology. As one of the important technologies in the field of
As electric vehicles (EVs) become increasingly popular, the demand for greater range is growing. Single-crystal LiNi 0.8 Co 0.1 Mn 0.1 O 2 is the lithium-ion battery cathode material with high specific capacity, good thermal stability, and reliable cycle performance [[1], [2], [3]].As the nickel content of ternary cathode materials increases, the specific capacity of
The kinetics of interfacial ion insertion govern the uniformity of electrochemical reactions, playing a crucial role in lithium-ion battery performance. In two-dimensional lithium-conducting layered-oxide battery particles, variation in insertion rates across insertion channels remains unclear due to poorly defined crystal orientation at the solid-liquid interface and solid-state-lithium
Here, we fabricated a freestanding, (104)-oriented-LiNi 1/3 Mn 1/3 Co 1/3 O 2 single-crystal thin film using dissolution-induced release and performed in situ scanning-transmission-X-ray-microscopy to spatially resolve lithium-insertion at well-defined-interfaces. We observed heterogeneous lithium-concentration evolution due to channel-by-channel insertion rate
In this work, the thickness of 6.294 μm 4 in. Si-based LN single crystal heterogeneous integration thin film was prepared by the method of CMP combined with the low temperature heat pressure method. Proved that the oxygen plasma activation treatment can effectively improve the interface hydrophilicity to enhance the bonding strength.
Nevertheless, due to the intrinsic structural properties of layered materials, single-crystal structures still face challenges related to sluggish Li + transport kinetics, heterogeneous state of charge, anisotropic changes in lattice parameters,
Here, utilizing the substrate-guided strategy, we develop a vdW epitaxy technique to synthesize 2D single-crystal molecular film. The unidirectional Sb 2 O 3 triangular
Here, we fabricated a freestanding, (104)-oriented-LiNi 1/3 Mn 1/3 Co 1/3 O 2 single-crystal thin film using dissolution-induced release and performed in situ scanning-transmission-X-ray-microscopy to spatially resolve lithium-insertion at well-defined-interfaces. We observed heterogeneous lithium-concentration evolution due to channel-by-channel insertion
DOI: 10.1002/adma.201603285 Corpus ID: 36028885; Heterogeneous Monolithic Integration of Single‐Crystal Organic Materials @article{Park2017HeterogeneousMI, title={Heterogeneous Monolithic Integration of Single‐Crystal Organic Materials}, author={Kyung S. Park and Jangmi Baek and Yoonkyung Park and Lynn Lee and Jinho Hyon and Yong-Eun Koo Lee and Nabeen
The process flow for the heterogeneous integration of a wafer-scale β-Ga 2 O 3 thin film onto a SiC substrate via the ion-cutting technique is schematically illustrated in Fig. S1 in Supplementary Materials. Hydrogen ions with an energy of 35 keV and a fluence of 1 × 10 17 cm −2 were implanted in a 2-inch free-standing (-201) β-Ga 2 O 3 wafer purchased from Novel
However, in the process of wet etching the SiO2 sacrificial layer present underneath the single-crystal silicon nano-film by using the transfer technology, the etching is often incomplete, which
Request PDF | On Nov 1, 2024, Binqiang Wang and others published Mechanism of heterogeneous substrate stimulating growth for nickel-based single crystal superalloy | Find, read and cite all the
Single-crystal NMCs appear to be superior to polycrystalline NMCs, especially at low Ni content (≤60%). However, Ni-rich single-crystal NMC cathodes experience even faster
The microstructural design of single-crystal nickel-rich cathode materials should emphasize the alignment of lattice parameters between heterostructures and layered oxides, as well as the...
Among novel semiconductors, perovskites have gained significant attention due to their versatility, combining tunable optoelectronic properties with relatively easy fabrication processes. However, certain issues
This article presents such an approach, which uses multi-scale modeling techniques to investigate multi-scale effects of the surface film growth. The model dynamically
Cuprous halides, characterized by a direct wide band-gap and a good lattice matching with Si, is an intrinsic p-type I-VII compound semiconductor. It shows remarkable optoelectronic properties
The crystallinity of the MASnI 3 single-crystal film was confirmed through X-ray diffraction (XRD) analysis, which showed four distinct diffraction peaks corresponding to the (001), (002), (003), and (004) crystal planes, all indicative of
Structural and morphological analyses. Figure 1(a) shows the refined X-ray diffraction pattern of the CuO nanoplatelets. It can be well indexed with a pure monoclinic symmetry unit cell with space group C2/c and has satisfactory convergence factors (R wp = 9.23%, R p = 7.57%, χ 2 = 3.17).The lattice parameters were refined as listed in Table 1.The
Here, we fabricated a freestanding, (104)-oriented-LiNi 1/3 Mn 1/3 Co 1/3 O 2 single-crystal thin film using dissolution-induced release and performed in situ scanning
Herein, the formation and electrochemical performance of a novel binder-free turbostratic stacked/ well-ordered stacked δ-MnO2-carbon fiber composite cathodes in deep eutectic solvent (DES) based
Development of diamond-based quantum and electronic technologies requires heterogeneous integration, which has remained challenging. This work realizes direct bonding of single crystal diamond
The inter-hole interference of nickel-based single crystal film-cooling holes specimen during creep deformation were investigated by both experiment and crystal plastic finite element method.
However, with the incorporation of biomacromolecules, heterogeneous structure often forms within biomineral single-crystals, which is achieved by living
In this study, the heterostructure CoMn₂O₄/MnS₂@C1-2-2 of MnS₂ and CoMn₂O₄ was obtained through high-temperature (Ar. 450 °C) calcination of a novel red single
In this study, we report a method for preparing single-crystal gallium nitride (GaN) films on 2D substrates by using centimeter-scale single-crystalline CVD-grown 2D films
The interface of heterogeneous nucleation on single crystal substrates View the table of contents for this issue, or go to the journal homepage for more 2016 IOP Conf. Ser.: Mater.
Recent studies have reported the synthesis of wafer-scale single-crystal hBN monolayers [28, 42], which offer a solid foundation from which to grow single-crystal wafer-scale Sb 2 O 3 film in the future. The thickness of the dielectric layer can be facilely controlled, which effectively mitigates the current leakage issues associated with thin hBN film.
F10 with cyano groups at 4,9-sites and branched 2-ethylhexyl chain encouragingly shows a highly ordered single-crystal-like molecular packing in solution-processed thin film after thermal annealing, and thus the resulting
The technique is known after the renowned scientist Jan Czochralski from Poland, who developed it in 1916. 52 However, numerous intrinsic difficulties are related to the growth of the
Herein we propose a Sb-anchoring single-crystalline engineering to enhance the microstructural and electrochemical stability of ultra-high-Ni layered oxides, where the
The heterogeneous integration of 2D CsCu 2 I 3 SCs film on various substrates was demonstrated, a self-powered GaN-CsCu 2 I 3 SC film photodetector exhibits high rectification ratio of 1250 (±1 V) with improved responsivity of 460 mA W −1 and EQE of 163 %, which outperforms most reported 2D lead-free halide perovskite film photodetectors.
There is limited research on the mechanism and behavior of heterogeneous nucleation of nickel-based superalloys. For example, in some typical systems of effective nucleation agents/superalloys, such as Co 3 FeNb 2 /IN718C [47], and Ni 3 Al/IN718 [48], the correlation between interfacial matching and lattice misfit has been elucidated.However, it is
DOI: 10.1016/j.jmrt.2024.11.198 Corpus ID: 274200230; Mechanism of heterogeneous substrate stimulating growth for nickel-based single crystal superalloy @article{Wang2024MechanismOH, title={Mechanism of heterogeneous substrate stimulating growth for nickel-based single crystal superalloy}, author={Binqiang Wang and Senhong Chen and Long Zeng and Mingxu Xia and
Based on the precise control of thermodynamics and kinetics, single-crystal Sb 2 O 3 molecular film with a desirable thickness was produced. The high-quality Sb 2 O 3 films grown on graphene were used as the gate stack, and enabled the high performance of the FET.
Single-crystal LiNi x Mn y Co 1-x-y O 2 (SC-NMC) cathode with electro-chemo-mechanically compliant microstructure is regarded as a promising candidate for high-energy–density lithium ion battery.
The microstructural design of single-crystal nickel-rich cathode materials should emphasize the alignment of lattice parameters between heterostructures and layered oxides, as well as the modulation of their spatial distribution, thereby ensuring the long-term efficacy of element doping and surface-interface modification.
In this study, we report a method for preparing single-crystal gallium nitride (GaN) films on 2D substrates by using centimeter-scale single-crystalline CVD-grown 2D films as a growth substrate. The structural characteristics of the GaN films were investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM).
Currently, there is limited understanding of the intricate interplay between thermodynamics and kinetics in the synthesis process of single-crystal cathode materials. A more profound exploration of the structural degradation and synthesis mechanisms of single-crystal materials will serve as a fundamental basis for targeted modification strategies.
To conclude, the heteroepitaxial growth of GaN films on CVD-grown h-BN layers was demonstrated in which the generation of a high number of atomic cliffs in the h-BN substrate was the key process in fabricating these GaN/h-BN heterostructures.
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