Rectification and tunneling effects enabled by Al2O3 atomic layer
Atomic layer deposition (ALD) of Aluminum oxide (Al2O3) is employed to optimize the back contact of thin film CdTe solar cells. Al2O3 layers with a thickness of 0.5 nm to 5 nm
Suppressing wide-angle light loss and non-radiative
Moreover, the beneficial effects of NP-FTO are also applicable to 1.77 eV wide-bandgap PSCs with a p–i–n structure, enabling the fabrication of all-perovskite tandem solar cells with a best
High rectification and photovoltaic effect in oxide nano-junctions
As a result, oxide p–f–n junctions with ultrathin ferroelectric layers could render an enhanced PV response and a higher rectification compared with those of oxide p–n
Brominated isomerization engineering of 1-chloronaphthalene
Effect of 1-fluoro-2-iodobenzene solvent additive on the crystallization of donors and acceptors, and ultrafast carrier dynamics in polymer solar cells Adv. Funct. Mater., 34 ( 2023 ), p.
Antenna designing for efficient rectenna solar cells
The absorption quality of the rectenna solar cell is much better than the photon based solar cell. The rectenna solar cell is a combination of a rectifying diode and an antenna [18–23]: the antenna absorbs the EM radiation and directly converts it into an electrical energy as alternating current (AC). The power flows as AC through the diode.
Effect of boron doping on the rectification effect and
Both the electrical rectification and photovoltaic parameters of CdS/Si-NPA show strong dependence upon B-doping concentration, and the optimal characteristics are achieved for the samples prepared with [B]/[Cd] = 0.01. Compared with CdS/Si-NPA solar cells without B-doping, an increment over 300 times for energy conversion efficiency is realized.
[PDF] Band Alignment for Rectification and Tunneling Effects in
Reducing recombination in polycrystalline solar cells by orders of magnitude is currently one of the greatest challenges for increasing thin-film solar cell efficiency to
Rectification and tunneling effects enabled by Al2O3 atomic layer
The performance improvement stems from the surface modification that optimizes the rectification and tunneling of back contact. The current-voltage analysis indicates that the back contact with 1...
Band Alignment for Rectification and Tunneling Effects
The present work intends to explain why ultrathin Al2O3 atomic-layer-deposited (ALD) on the back contact with rectification and tunneling
Introduction to semiconductor processing:
While the performance of the fabricated solar cell was significantly reduced compared to a commercial solar cell, the students were able to fabricate a p-n junction that
Rectification and tunneling effects enabled by Al2O3 atomic layer
The current-voltage analysis indicates that the back contact with 1 nm Al 2O3 maintains large tunneling leakage current and improves the filled factor of CdTe cells through
(PDF) High rectification and photovoltaic effect in oxide nano
Effect of ferroelectric layer thickness on photovoltaic performance According to conventional semiconductor solar cell physics, Voc depends on IL and I0 of a solar cell. I0 is a more important factor because this can be changed by some orders of magnitude, while IL varies only slightly.
Hybrid perfect metamaterial absorber for microwave spin rectification
The metal ohmic loss eventually leads to heat generation which can thereby be utilized in hot carrier related solar-thermal and chemical processes 29, while the improved dielectric absorption can
Back-surface electric field passivation of CdTe solar cells using
Each individual solar cell was precisely defined by mechanical scribing (1 cm 2). It is worth noting that all devices were not etched after the CdCl 2 treatment. As shown in Fig. 1, and the rectification effect of the back contact is optimized [18]. However, the excess of n-type material brings new disturbances to the cell, such as higher
Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification
The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. [10,11,12], solid state solar cells [13,14], and other fields. Both
Solar Thermoradiative-Photovoltaic
Even though TR cells are a relatively new concept, they have already been demonstrated experimentally 40–42 and have been shown to have great potential as
Atomic-Layer-Deposited on Back Contact for CdTe Solar Cell Band
1 Band Alignment for Rectification and Tunneling Effects in Al 2O 3 Atomic- Layer-Deposited on Back Contact for CdTe Solar Cell Yantao Su, †,‡ Chao Xin,†,‡ Yancong Feng, † Qinxian Lin,† Xinwei Wang,† Jun Liang,† Jiaxin Zheng, † Yuan Lin,† and Feng Pan *,† †School of Advanced Materials, Peking University, Peking University Shenzhen Graduate
Band Alignment for Rectification and Tunneling
The present work intends to explain why ultrathin Al2O3 atomic-layer-deposited (ALD) on the back contact with rectification and tunneling effects can significantly improve the performance of CdTe solar cells in our previous
Rectification and tunneling effects enabled by Al2O3 atomic
Atomic layer deposition (ALD) of Aluminum oxide (Al2O3) is employed to optimize the back contact of thin film CdTe solar cells. Al2O3 layers with a thickness of 0.5 nm to 5 nm are tested, and an improved efficiency, up to 12.1%, is found with the 1 nm Al2O3 deposition, compared with the efficiency of 10.7% without Al2O3 modification. The performance
Band Alignment for Rectification and Tunneling Effects in Al2O3
The present work intends to explain why ultrathin Al2O3 atomic-layer-deposited (ALD) on the back contact with rectification and tunneling effects can significantly improve the performance of CdTe solar cells in our previous work [Liang, J.; et al. Appl. Phys. Lett. 2015, 107, 013907]. Herein, we further study the mechanism through establishing the interfacial energy band
Rectification and tunneling effects enabled by Al
Atomic layer deposition (ALD) of Aluminum oxide (Al 2 O 3) is employed to optimize the back contact of thin film CdTe solar cells. Al 2 O 3 layers with a thickness of 0.5
Tailoring the optical and electrical behavior of Cu2O/ZnO
The urge for clean energy sources manifests globally which enkindles replacing fossil fuel with renewable energy sources [1].Among the renewable energy supplies, photovoltaic (PV) is the enticing selection to reach the clean energy requirements [2].Photovoltaic technology uses solar cells to convert the abundant, clean solar energy source to electricity.
Band Alignment for Rectification and Tunneling Effects in Al 2 O
, band alignment, back contact, CdTe solar cell 1. INTRODUCTION Although Si-based solar cell devices currently dominate photovoltaic power production, thin-film solar cell devices based on CdTe have achieved a notable market share as a cost-effective alternative.1−3 For thin-film CdTe solar cells, efficiency improvement is always the main
SnSe Solar Cells: Current Results and Perspectives
This work presents current advances and perspectives on SnSe thin film solar cell technology. Nowadays, SnSe solar cells have not been able to achieve efficiency values higher than 7%.
Solar power without solar cells: A hidden magnetic effect of light
ANN ARBOR—A dramatic and surprising magnetic effect of light discovered by University of Michigan researchers could lead to solar power without traditional semiconductor-based solar cells. The researchers found a way to make an "optical battery," said Stephen Rand, a professor in the departments of Electrical Engineering and Computer Science, Physics and
SOLAR CELLS sivation ( Amidination of ligands for chemical
SOLAR CELLS Amidination of ligands for chemical and field-effect passivation stabilizes perovskite solar cells Yi Yang 1†, Hao Chen1†, Cheng Liu †, Jian Xu2†, Chuying Huang1, Christos D. Malliakas1, Haoyue Wan1,2, Abdulaziz S. R. Bati 1, Zaiwei Wang2, Robert P. Reynolds1, Isaiah W. Gilley,
Efficient hole transport layers for silicon heterojunction solar cells
Crystalline silicon (c-Si) solar cells currently command a 95% share of the global photovoltaic market owing to their high conversion efficiency, straightforward manufacturing processes, and long-term stability [1] ncurrently, silicon heterojunction (SHJ) solar cells, recognized for their high efficiency in mass production, have achieved a record-breaking peak
Causes and Solutions of the Potential
This is at zero potential because most of the time it is grounded, so, due to the very short distance between solar cells and frame and due to possible presence of impurities in
Band Alignment for Rectification and Tunneling Effects in Al
The present work intends to explain why ultrathin Al 2 O 3 atomic-layer-deposited (ALD) on the back contact with rectification and tunneling effects can significantly
Carbon Nanotube/semiconductor van der Waals Heterojunction Solar Cells
Under the ambient conditions, a thin native oxide layer are easily formed at the SWCNT/n-type Si interface, which will affect the PCE of the solar cell if the thickness further increases. For a pristine SWCNT/Si solar cell, the optimum thickness of native oxide layer is believed to be ~0.7 nm [9, 49]. Due to the existence of the insulating
Rectification and tunneling effects enabled by Al2O3 atomic
CdTe solar cells with Cu dopant and ALD-Al 2O 3 with thick-ness from 0.5nm to 5nm. The CdTe solar cells based on such Al 2O 3 ALD layer displays superior performance of efficiency due to the optimized rectification and tunneling effects. CdTe solar cells were fabricated as following: 200nm thick CdS window layers were grown by radio frequency
Efficient metal concave bow tie rectifying antenna for solar energy
The aim was to convert a portion of the solar spectrum that current photovoltaic cells cannot effectively convert into electrical energy. The Georgia Institute of Technology proposed a nano rectification antenna structure using a carbon nanotube antenna and a metal–insulator–metal tunnel diode as a rectifier [11]. After testing, the antenna
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